期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 12, 页码 1530-1532出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2285117
关键词
a-Si:H solar cell; autonomously powered circuit; plasma enhanced atomic layer deposition (PEALD) ZnO thin-film transistors (TFTs); seven-stage ring oscillator
资金
- SOLCHIP
Cost-effective integration of a-Si:H solar cells and oxide-based thin-film transistor (TFT) circuits may lead to broader battery-free device applications. We demonstrate a n-i-p a-Si:H 15-series connected solar cell that supplies power to a ZnO-based ring oscillator. The ring oscillator can operate at 28 kHz at 6 V, corresponding to approximate to 100 mW/cm(2) illumination. This letter describes the integration and compact fabrication of the a-Si:H solar cell and ZnO TFT ring oscillator. The fabrication process includes several mask steps to reduce the number of processing steps.
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