期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 11, 页码 1385-1387出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2282154
关键词
Conductive filament (CF); metal oxide; nonvolatile memory; quantized conductance (QC); resistive random access memory (RRAM); resistive switching (RS); titanium dioxide
资金
- National Science Foundation [DMR-1006725]
- Office of Naval Research [14-10-1-0489]
- J. S. Swearingen Regents Chair in Engineering at The University of Texas at Austin
TiO2 has been investigated extensively as an active resistive switching (RS) material for resistive random access memory. In this letter, single-crystal anatase-TiO2 thin films fabricated on silicon by atomic layer deposition are used to realize highly stable and clean bipolar RS behavior with a record high ON/OFF ratio (similar to 10(7)) and low leakage current in the high-resistance state. The switching characteristics resemble those of electrochemical memories via formation and dissolution of conductive filaments (CFs) composed of oxygen vacancies, and small numbers of quantized channels are reproducibly observed in the low-resistance state, consistent with quantized conductance (QC) found in conventional electrolytic systems and indicating its potential for forming ultrathin CF amenable to device scaling. A detailed analysis of QC and contact resistance is presented. The emergence of QC is believed to be related to the single-crystal nature of the TiO2 thin films.
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