期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 10, 页码 1334-1336出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2277693
关键词
Antimony telluride (Sb2Te3); bismuth telluride (Bi2Te3); CMOS; FinFET; heterogeneous integration; thermoelectricity
资金
- King Abdullah University of Science and Technology through an Academic Excellence Alliance Global Collaborative Research Grant
This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thin-film-based thermoelectric (TE) devices on a CMOS substrate. The TE films are deposited on a silicon-on-insulator substrate with FinFETs (3-D multiple gate field effect transistors) via a characterized TE-film coevaporation and shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 x 2 mm(2)-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 mu W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers.
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