期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 1, 页码 42-44出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2225137
关键词
Chemomechanical polishing (CMP); GaAs; N-polar GaN; wafer bonding
资金
- Air Force Office of Scientific Research
- National Science Foundation
This letter reports wafer-bonded p-n heterojunction diodes, which consist of GaAs and chemomechanically polished N-polar GaN. The measured I-V and C-V show well-behaved p-n junction characteristics. The built-in voltage extrapolated from the C-V is 0.2 V less than the theoretical, suggesting the existence of interface states. However, this offset is much less than that (1.14 V) reported of wafer-bonded GaAs/Ga-polar GaN p-n diodes. The limited maximum current suggests pinning of the Fermi level at interface traps near the conduction band accessed under forward bias. Yet, this junction shows promise as a collector junction for wafer-bonded devices to achieve higher breakdown voltages.
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