期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 10, 页码 1414-1416出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2210019
关键词
Bridged grain (BG); polycrystalline silicon (poly-Si); thin-film transistors (TFTs)
资金
- Hong Kong Government Research Grants Council Theme-Based Research Scheme [T23-713/11-1]
Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.
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