期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 2, 页码 185-187出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2177435
关键词
Hafnium oxide; metal-ferroelectric-insulator-semiconductor (MFIS) FET; nonvolatile memory
资金
- European Community within the scope of technology development
- State of Saxony
We report the fabrication of completely CMOS-compatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin Si : HfO2. The program and erase operation of this metal-ferroelectric-insulator-silicon FET (MFIS) with poly-Si/TiN/Si : HfO2/SiO2/Si gate stack is compared to the transient switching behavior of a TiN-based metal-ferroelectric-metal (MFM) capacitor. Polarization reversal in the MFM capacitor follows a characteristic time and field dependence for ferroelectric domain switching, leading to a higher switching speed with increasing applied field. Similar observations were made for the material when implemented into an MFIS structure. Nonvolatile switching was observed down to 20-ns pulsewidth, yielding a memory window (MW) of 1.2 V. Further increase in gate bias or pulsewidth led to charge injection and degradation of the MW. Retention measurements for up to 10(6) s suggest a retention of more than ten years.
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