期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 3, 页码 420-422出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2177804
关键词
Carbon nanotubes (CNTs); densification; interconnects; through-silicon vias (TSVs); transfer
资金
- EU
- Swedish National Science Foundation (VR) [2009-5042]
- Swedish Foundation for Strategic Research (SSF)
- Chinese Ministry of Science and Technology [2010DFA14450]
- Sustainable Production Initiative and the Production Area of Advance at Chalmers
Through-silicon vias (TSVs) filled with densified and transferred carbon nanotube (CNT) forests are experimentally demonstrated. The filling is achieved by a postgrowth low-temperature transfer process at 200 degrees C instead of direct CNT growth in the vias normally requiring high temperature. A vapor densification method is also applied to densify the as-grown CNT forests, which allows for packing more CNTs in the vias to reduce their resistances. CNT-filled TSVs fabricated based on these two key steps show CMOS compatibility and roughly one order of magnitude reduction in resistivity compared to the TSVs filled with as-grown undensified CNT forests.
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