相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth
Uttam Singisetti et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Enhancement-Mode InAlN/AlN/GaN HEMTs With 10-12 A/mm Leakage Current and 1012 ON/OFF Current Ratio
Ronghua Wang et al.
IEEE ELECTRON DEVICE LETTERS (2011)
220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs
Ronghua Wang et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
Jia Guo et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2011)
Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth
Sansaptak Dasgupta et al.
APPLIED PHYSICS LETTERS (2010)
Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance
Ronghua Wang et al.
IEEE ELECTRON DEVICE LETTERS (2010)
205-GHz (Al,In)N/GaN HEMTs
Haifeng Sun et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
Remziye Tulek et al.
JOURNAL OF APPLIED PHYSICS (2009)
Very low sheet resistance and Shubnikov-de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN/GaN heterojunctions
Yu Cao et al.
APPLIED PHYSICS LETTERS (2008)
GaN-Based RF power devices and amplifiers
Umesh K. Mishra et al.
PROCEEDINGS OF THE IEEE (2008)
Surface potential measurements on Ni-(Al)GaN lateral Schottky junction using scanning Kelvin probe microscopy
C Lian et al.
APPLIED PHYSICS LETTERS (2006)
Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN
CT Lee et al.
APPLIED PHYSICS LETTERS (2001)
Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN
S Heikman et al.
APPLIED PHYSICS LETTERS (2001)
分享论文
