期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 10, 页码 1474-1476出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2210185
关键词
Memristor; resistive switching; RRAM
资金
- Ministry of Science and Innovation [TEC09-09350]
- DURSI, Generalitat de Catalunya, Spain [2009SGR783]
Among the wide variety of electron devices and systems that exhibit pinched hysteresis current-voltage (I-V) characteristics, those associated with filamentary-like conduction have attracted significant attention in the last years because of their potential relevance in the field of nonvolatile memories. At the nanoscale, the quantum conductance unit G(0) = 2e(2)/h, where e is the electron charge and h is the Planck constant, establishes a well-defined upper current limit I = G(0)V for the monomode ballistic conductor. Here, we explore two possible mechanisms that can lead to lower conductance loops: continuous modulation of the constriction's potential profile and discrete changes of the transmission probability through a chain of identical scatterers. The connection with the so-called memristive systems is also discussed.
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