4.6 Article

Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Review Materials Science, Multidisciplinary

Review Paper: Transparent Amorphous Oxide Semiconductor Thin Film Transistor

Jang-Yeon Kwon et al.

ELECTRONIC MATERIALS LETTERS (2011)

Article Engineering, Electrical & Electronic

150 degrees C Amorphous Silicon Thin Film Transistors With Low-Stress Nitride on Transparent Plastic

Isaac Chan et al.

JOURNAL OF DISPLAY TECHNOLOGY (2011)

Article Physics, Applied

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

Te-Chih Chen et al.

APPLIED PHYSICS LETTERS (2010)

Review Materials Science, Multidisciplinary

Present status of amorphous In-Ga-Zn-O thin-film transistors

Toshio Kamiya et al.

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2010)

Article Physics, Applied

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

M. E. Lopes et al.

APPLIED PHYSICS LETTERS (2009)

Article Materials Science, Multidisciplinary

Structural and optical properties of La-doped ZnO films prepared by magnetron sputtering

Wei Lan et al.

MATERIALS LETTERS (2007)

Article Physics, Applied

Transparent thin-film transistors with zinc indium oxide channel layer

NL Dehuff et al.

JOURNAL OF APPLIED PHYSICS (2005)

Article Chemistry, Physical

Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates

H Gleskova et al.

APPLIED SURFACE SCIENCE (2001)