4.6 Article

A Subharmonic Graphene FET Mixer

期刊

IEEE ELECTRON DEVICE LETTERS
卷 33, 期 1, 页码 71-73

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2170655

关键词

FETs; graphene; subharmonic resistive mixers

资金

  1. Swedish Foundation for Strategic Research (SSF)
  2. Knut and Alice Wallenberg Foundation

向作者/读者索取更多资源

We demonstrate a subharmonic resistive graphene FET mixer utilizing the symmetrical channel-resistance versus gate-voltage characteristic. A down-conversion loss of 24 dB is obtained with f(RF) = 2 GHz, f(LO) = 1.01 GHz, and f(IF) = 20 MHz in a 50-Omega-impedance system. Unlike conventional subharmonic resistive FET mixers, this type of mixer operates with only one transistor and does not need any balun at the local oscillator (LO) port, which makes it more compact.

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