期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 1, 页码 71-73出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2170655
关键词
FETs; graphene; subharmonic resistive mixers
资金
- Swedish Foundation for Strategic Research (SSF)
- Knut and Alice Wallenberg Foundation
We demonstrate a subharmonic resistive graphene FET mixer utilizing the symmetrical channel-resistance versus gate-voltage characteristic. A down-conversion loss of 24 dB is obtained with f(RF) = 2 GHz, f(LO) = 1.01 GHz, and f(IF) = 20 MHz in a 50-Omega-impedance system. Unlike conventional subharmonic resistive FET mixers, this type of mixer operates with only one transistor and does not need any balun at the local oscillator (LO) port, which makes it more compact.
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