Cu-Embedded AlN-Based Nonpolar Nonvolatile Resistive Switching Memory

This letter covers the fabrication of a nonpolar resistive switching (RS) random access memory device using Cu-embedded AlN and its reproducible RS characteristics. The AlN-based memory device shows endurance of > 10(3), reliable retention time (ten years extrapolation at both room temperature and 85 degrees C), and fast programming speed under 100-ns pulses in unipolar operation mode. The switching mechanism is believed to be mediated by the formation and rupture of conductive Cu filaments.