4.6 Article

Super-High-Frequency SAW Resonators on AlN/Diamond

期刊

IEEE ELECTRON DEVICE LETTERS
卷 33, 期 4, 页码 495-497

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2183851

关键词

AlN/diamond; surface acoustic wave (SAW) resonator; super-high-frequency band; thickness influence

资金

  1. Ministerio de Ciencia e Innovacion under the ReADi [TEC2010-19511]
  2. Accion Integrada [DE2009-0015]
  3. European Community
  4. EPSRC [EP/J009814/1] Funding Source: UKRI
  5. Engineering and Physical Sciences Research Council [EP/J009814/1] Funding Source: researchfish

向作者/读者索取更多资源

This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10-14 GHz range with up to 36 dB out-of-band rejection.

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