期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 4, 页码 495-497出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2183851
关键词
AlN/diamond; surface acoustic wave (SAW) resonator; super-high-frequency band; thickness influence
资金
- Ministerio de Ciencia e Innovacion under the ReADi [TEC2010-19511]
- Accion Integrada [DE2009-0015]
- European Community
- EPSRC [EP/J009814/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/J009814/1] Funding Source: researchfish
This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10-14 GHz range with up to 36 dB out-of-band rejection.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据