期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 4, 页码 480-482出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2185033
关键词
Charges; defects; degradation; hole traps; instability; interface states; lifetime; negative bias temperature instability; reliability
资金
- Engineering and Physical Science Research Council of the U.K. [EP/I012966/1]
- EPSRC [EP/I012966/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/I012966/1] Funding Source: researchfish
Defect generation limits device lifetime and enhances its variability. Previous works mainly addressed the generation kinetics and process. The current understanding is that the microstructure responsible for defect can exist either as a precursor or as a charged defect. A precursor is converted into a defect during stresses, but a defect can return to its precursor status through recovery and/or anneal. This letter will introduce a new concept: defect loss. A lost defect will not return to the precursor status. When stressed again, the lost defect will not reappear. It is found that the defect loss is thermally activated and a reduction of the permanent component makes substantial contribution to the loss. This letter opens the way for improving device lifetime through maximizing defect loss.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据