InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and ION/IOFF Ratio Near 106

Vertical n-channel tunnel field-effect transistors (TFETs) with tunneling normal to the gate based on an n(+) Inx=0.53->1GaAs/p(+) InP heterojunction have been demonstrated to exhibit simultaneously a high I-ON/I-OFF ratio of 6 x 10(5), a minimum subthreshold swing (SS) of 93 mV/dec, and an on-current of 20 mu A/mu m at V-DS = 0.5 V and a gate swing of 1.75 V at 300 K, a record TFET performance. The significant improvement in device performance is ascribed to the adoption of a thin equivalent oxide thickness (EOT) of similar to 1.3 nm for improved electrostatics and the use of plasma-enhanced chemical vapor deposition SiNx mesa passivation to preserve the integrity of the thin exposed semiconductor layers.