期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 6, 页码 824-826出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2191132
关键词
Amorphous InGaZnO (a-IGZO); inverter; ring oscillator; thin-film transistor (TFT); ultrathin
资金
- Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology Industrial Strategic Technology Development Program [10035225]
Stable and fast-switching thin-film transistors and circuits incorporating 5-nm-thick amorphous-InGaZnO (a-IGZO) active layers are demonstrated, and their dependence on channel length is studied. Turn-on voltage shifts in the positive gate voltage direction as the channel length increases. A low area density of defects in the bulk a-IGZO, which is ultrathin, results in good stability under positive bias stress, whereas interdiffusion of electrons/electron donors from the highly doped source and drain regions to the channel edges results in the dependence of turn-on voltage on channel length. Stable operation of an 11-stage ring oscillator is achieved with a propagation delay time of similar to 97 mu s/stage due to reduced gate-to-drain overlap capacitance and parasitic resistances.
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