期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 5, 页码 718-720出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2188989
关键词
Resistive random access memory (ReRAM); selection property; vanadium oxide (VOx) nanoscale device
资金
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2011-0018646]
- Ministry of Knowledge Economy
- Korea Evaluation Institute of Industrial Technology (KEIT) [10039191] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2008-0060067] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VOx) device simultaneously exhibited self-selective performance and memory switching by electroforming. By using W instead of Pt for the top electrode, memory performance was improved in terms of cycling, pulse endurance, and retention properties attributed to a self-formed WOx/VOx interface. Such a phenomenon in a simple metal-oxide-metal structure provides a good potential for future high-density cross-point memory devices by avoiding the sneak-path problem.
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