期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 3, 页码 354-356出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2179003
关键词
AlGaN/GaN high electron mobility transistor (HEMT); enhancement-mode (E-mode); high-frequency; nanochannel array (NCA)
资金
- National Basic Research Program of China (973 Program) [G2009CB929300]
- National Natural Science of China [10834004]
- National Natural Science Foundation of China [60871077]
In this letter, enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated based on lateral scaling of the 2-D electron gas channel using nanochannel array (NCA) structure. The NCA structure consists of multiple parallel channels with nanoscale width defined by electron-beam lithography and dry etching. Because of the improved gate control from the channel sidewalls and partially relaxed piezoelectric polarization, the fabricated 2 mu m-gate-length NCA-HEMT with a nanochannel width of 64 nm showed a threshold voltage of +0.6 V and a higher extrinsic transconductance of 123 mS/mm, compared to -1.6 V and 106 mS/mm for the conventional HEMT with mu m-scale channel width. The scaling of threshold voltages, peak transconductance, and gate leakage as a function of the nanochannel width were investigated. Small-signal RF performance of NCA-HEMTs were characterized for the first time and compared with those of conventional HEMTs.
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