期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 5, 页码 646-648出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2188373
关键词
Resistive memory (ReRAM); RRAM; single filament; stability; variability; uniformity
资金
- Semiconductor Research Corporation
- National Research Foundation of Korea
- Korea government (MEST) [2011-0018646]
- National Research Foundation of Korea [2008-0060067] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We successfully fabricated a single-filament-activated resistive memory having limited conductive filament (CF) source through a novel fabrication technique. The formation of a single filament was confirmed using conductive atomic force microscopy. Compared to conventional programmable metallization cell devices having an unlimited CF source, our single-filament device showed a significantly improved switching variability by minimizing the probability of randomly formed CFs. The elimination of unlimited CF sources changed the rate-limiting parameter that determines the retention and disturbance properties and improved thermal and electrical stability.
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