期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 8, 页码 1168-1170出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2198192
关键词
AlN/GaN high-electron-mobility transistors (HEMTs); grown on silicon substrate (GaN-on-Si); high output power density; Ka-band
In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage current, resulting in high-frequency performance (f(max) close to 200 GHz). Furthermore, the control of the trapping effects on these highly scaled devices enabled to set a first benchmark at 40 GHz with 2.5 W/mm at V-DS = 15 V, mainly limited by RF losses and thermal issues. These results show that an AlN/GaN/AlGaN heterostructure grown on silicon substrate is a viable technology for cost-effective high-power millimeter-wave amplifiers fully compatible with standard Si-based devices.
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