Correlation Between Random Telegraph Noise and 1/f Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain

The random telegraph noise (RTN) characteristics of 28-nm pMOSFETs with tip-shaped SiGe source/drain have been investigated. RTN analysis found that strained devices undergo higher compressive strain; the trap position from the Si/SiO2 interface is reduced, because of the closer trap energy level near the valence band. Although tip-shaped SiGe process induces higher oxide trap density, the trap position corresponding to the tunneling attenuation length (lambda) may result in lower 1/f noise level in tip-shaped SiGe S/D devices as compared with that of control devices.