期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 2, 页码 269-271出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2174610
关键词
Cantilever beam; GaAs monolithic microwave integrated circuit (MMIC); MEMS; thermoelectric power sensor
资金
- National Natural Science Foundation of China [61076108, 60976094]
- National High Technology Research and Development Program of China (863 Program) [2007AA04Z328]
A novel thermoelectric and capacitive power sensor with improved dynamic range based on GaAs monolithic microwave integrated circuit (MMIC) technology is proposed in this letter. This power sensor is designed and fabricated using GaAs MMIC process and MEMS technology. A MEMS cantilever beam is introduced and monolithically integrated as a capacitive power sensor to improve the overload capacity and the dynamic range at the cost of sensitivity. The measurement results verify the role of the MEMS cantilever beam. Another advantage of this power sensor consists in compatibility with MMIC devices and other planar connecting circuit structures with zero dc power consumption.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据