期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 9, 页码 1260-1262出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2160149
关键词
Avalanche photodiode (APD); GaN; homoepitaxy; metal-semiconductor-metal (MSM)
资金
- State Key Program for Basic Research of China [2010CB327504, 2011CB922100, 2011CB301900]
- National Natural Science Foundation of China [60825401, 60806026, 60936004, 60990311]
We report the first demonstration of a GaN-based planar metal-semiconductor-metal (MSM) ultraviolet (UV) avalanche photodiode (APD). The MSM APD with semitransparent interdigitated Schottky electrodes is fabricated on a low-defect-density GaN homoepitaxial layer grown on a bulk GaN substrate by metal-organic chemical vapor deposition. The dislocation density of the GaN homoepilayer characterized by a cathodoluminescence mapping technique is similar to 5 x 10(6) cm(-2). The photodiode exhibits a low dark current density of similar to 1.4 x 10-9 A/cm(2) and a high UV-to-visible rejection ratio up to five orders of magnitude under 20-V bias. At high bias, a room-temperature avalanche gain of more than 1100 is achieved under 365-nm UV illumination. The breakdown voltage of the APD shows a positive temperature coefficient of 0.15 V/K, confirming that the high-voltage gain is dominated by the avalanche breakdown mechanism.
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