4.6 Article

Breakdown Current Density of CVD-Grown Multilayer Graphene Interconnects

期刊

IEEE ELECTRON DEVICE LETTERS
卷 32, 期 4, 页码 557-559

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2108259

关键词

Current density; graphene; interconnect

资金

  1. Interconnect Focus Center

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Graphene wires have been fabricated from large-area multilayer graphene sheets grown by chemical vapor deposition. As the methane concentration increases, a larger percentage of thicker graphene layers are grown. The multilayer graphene sheets have an average thickness of 10-20 nm with sheet resistances between 500 and 1000 Omega/sq. The sheet resistance shows a strong correlation with the average surface roughness. This letter reports measured breakdown current densities up to 4 x 10(7) A/cm(2), where resistive heating is proposed as the main breakdown mechanism. Increasing the uniformity of the graphene layers is important in achieving a higher breakdown current density.

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