期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 6, 页码 794-796出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2125774
关键词
A(2)O(3); atomic layer deposition (ALD); conductive filament; nanocrystals; resistive switching
资金
- National Natural Science Foundation of China [61076114]
- Shanghai Educational Develop Foundation [10CG04]
- Specialized Research Fund for the Doctoral Program of Higher Education [20100071120027]
- Fundamental Research Funds for the Central Universities
- Science and Technology Committee of Shanghai [1052070420]
Resistive switching behaviors of Al2O3-based memory devices with and without ruthenium nanocrystals (RuNCs) fabricated by atomic layer deposition are investigated for non-volatile-memory applications. Large resistance ratios (> 10(5)) of high-to low-resistance states were observed with nanocrystals contribution. Moreover, improvements of stability device yield and retention performance were also achieved by embedding RuNCs. Therefore, the Al2O3-based resistive memory device composed of embedded nanocrystals is a possible solution for future integrated standalone storage class memory processes.
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