☆
4.6
Article
Good Endurance and Memory Window for Ti/HfOx Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer
IEEE ELECTRON DEVICE LETTERS (2011)
评价这篇论文
主要评分表示论文的整体质量水平。次要评分独立反映论文的优点或缺点。
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started