期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 11, 页码 1510-1512出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2166241
关键词
CMOS; organic substrate; plastic; thin film
资金
- ST-IEMN Common Laboratory
This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 mu m and transferred onto a 125-mu m-thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5-mu m-thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that dc and RF performances are invariant even for ultimate thinning down to the buried oxide layer. Furthermore, n-MOSFET performance is improved by 1.5x compared with previous work, and the first demonstration of 100-GHz p-MOSFETs on an organic substrate is presented. Unity-current-gain cutoff and maximum oscillation frequencies as high as 150/160 GHz for n-MOSFETs and 100/130 GHz for p-MOSFETs on a plastic substrate have been measured, respectively.
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