Semitransparent Field-Effect Transistors Based on ZnO Nanowire Networks

This investigation demonstrates the fabrication of semitransparent field-effect transistors with self-assembling ordered ZnO nanowire (NW) networks, using a high-k HfO2 gate. The devices exhibit excellent optical transparency and transistor performance at on/off ratios of > 10(5), a mobility of similar to 7.59 cm(2) . V-1 . s(-1), and threshold voltages of similar to 4 V. Under UV illumination (3.65 eV), the devices exhibit the highest relative photoconductivity (similar to 2.08 x 10(5)), corresponding to a photoresponsivity of 3.96 A/W at low operating voltages (V-GS = 0 V and V-DS = 1 V). The result suggests that the NW-based devices have low power consumption and high photosensivity when used in photodetection.