期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 4, 页码 545-547出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2104936
关键词
Cobalt silicon oxide (CoSiOX); nonvolatile memory (NVM); redox reaction; resistance switching
资金
- National Science Council of Taiwan [NSC-99-2120-M-110-001, NSC-97-2112-M-110-009-MY3]
This letter investigates the resistive random access memory device characteristics and the physical mechanism of a device with a TiN/CoSiOX/Pt structure. In general, the mechanism is regarded as a redox reaction in the dielectric interface between the Ti electrode and the conductive filament. Furthermore, the switching voltage is correlated only with redox reaction potential. A designed circuit is used to accurately observe the resistance switching process with a pulse generator and an oscilloscope, which reveals that the switching process is related to both time and voltage. The constant switching energy demonstrates that the switching mechanism is the redox reaction.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据