Reset Statistics of NiO-Based Resistive Switching Memories

In this letter, we present the characterization and modeling of the reset statistics of Pt/NiO/W resistive random access memories. The experimental observations show that the Weibull slopes of both V(reset) and I(reset) cumulative distributions increase linearly with 1/R(on). The value of V(reset63%) is roughly independent of R(on) while I(reset63%) increases with 1/R(on). Fully analytical cell-based models based on the thermal dissolution of conductive filament are proposed for the reset switching statistical distributions, which can account for the experimental results with a remarkable agreement.