期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 4, 页码 464-466出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2108993
关键词
Band-to-band tunneling; strain; stress; tunneling FET (TFET)
资金
- Defense Advanced Research Projects Agency under Air Force Research Laboratory [FA8650-08-C-7806]
The electrical characteristics of a heterojunction tunneling field-effect transistor (HETT), with a p-type Si(0.75)Ge(0.25) source, have been measured as a function of strain. HETTs with channel transport and applied strain both in the [110] direction show a smooth monotonic change in drain current over a range of 0.09% compressive to 0.13% tensile strain. A measure gamma = (d/d ln J(D))(d ln J(D)/ds) vertical bar(s=0) of the effect of strain s on tunneling current J(D) is proposed, which captures the dependence of the tunneling exponential argument on strain. An experimental value of gamma = -11.7 is extracted for the tensile case and compared to simulation results. We found theoretically that the value and sign of. depend sensitively on the built-in strain at the Si-SiGe interface.
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