期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 2, 页码 170-172出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2093504
关键词
Amorphous indium-gallium-zinc-oxide (a-IGZO); gate driver; polyethylene terephthalate (PET); ring oscillator; shift register
资金
- MKE/KEIT [10035225]
Circuits implemented with high-performance amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs) are realized on polyimide/polyethylene-terephthalate plastic substrates. The TFTs on plastic exhibit a saturation mobility of 19 cm(2)/V.s and a gate voltage swing of similar to 0.14 V/dec. For an input of 20 V, an 11-stage ring oscillator operates at 94.8 kHz with a propagation delay time of 0.48 mu s. A shift register, consisting of ten TFTs and one capacitor, operates well with good bias stability. AC driving of pull-down TFTs gives the gate driver an improved lifetime of over ten years.
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