期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 4, 页码 542-544出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2105242
关键词
GaN; polarization junction (PJ); super junction; 2-D hole gas
资金
- Royal Society of London
- British Academy
- Royal Academy of Engineering
GaN super heterojunction field effect transistors (super HFET) based on the polarization junction concept are demonstrated for the first time. The super HFET has charges of 2-D electron gas and hole gas, respectively induced by positive and negative polarization charges at GaN/AlGaN/GaN hetero-interfaces. Analogous to the RESURF concept, these unintentionally doped positive and negative polarization charges compensate each other in the OFF state condition to enhance the breakdown capability of the super HFET. The super HFETs have been fabricated on sapphire substrates and the electrical measurements show breakdown voltages over 1.1 kV with specific on-resistance of 6.1 m Omega . cm(2).
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