期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 7, 页码 871-873出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2147755
关键词
Dielectric; field-effect transistors (FETs); graphene; microwave transistors
资金
- Swedish Foundation of Strategic Research
- Wallenberg Foundation (KAW)
We report on the influence of a silicon nitride gate dielectric in graphene-based field-effect transistors (FETs). The silicon nitride is formed by a plasma-enhanced chemical vapor deposition method. The process is based on a low-density plasma at a high pressure (1 torr), which results in a low degradation of the graphene lattice during the top-gate formation process. Microwave measurements of the graphene FET show a cutoff frequency of 8.8 GHz for a gate length of 1.3 mu m. A carrier mobility of 3800 cm(2)/V . s at room temperature was extracted from the dc characteristic.
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