期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 3, 页码 396-398出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2099205
关键词
HfOx; resistive random access memory (RRAM); unipolar resistive switching (RS)
资金
- A*STAR [092 151 0086]
In this letter, a resistive random access memory based on Ni electrode/HfOx dielectric/n(+) Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high ON/OFF resistance ratio (>10(3)), good retention characteristics (>10(5) s at 150 degrees C), satisfactory pulse switching endurance (>10(5) cycles), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer.
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