期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 3, 页码 315-317出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2100075
关键词
Electric double layer (EDL); ion-incorporated solid electrolytes; nanowire transistors
资金
- National Natural Science Foundation of China [10874042]
- Foundation for the Author of National Excellent Doctoral Dissertation of China [200752]
- Natural Science Foundation of Zhejiang Province [0804201051]
Fully transparent In2O3 nanowire transistors gated by LiCl-incorporated SiO2-based solid electrolytes are fabricated on glass substrates at room temperature. Ultralow-voltage (0.4 V) operation of such a device is realized due to the extremely large electric-double-layer (EDL) capacitance (8.93 mu F/cm(2) at 20 Hz) of the composite solid electrolyte. The subthreshold slope and equivalent field-effect mobility of the transparent nanowire EDL transistors are estimated to be 70 mV/dec and 739.7 cm(2)/V . s, respectively. Such ultralow-voltage transparent nanowire transistors are promising for portable invisible sensors.
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