期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 10, 页码 1319-1321出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2161861
关键词
HfSiON; high-k dielectric; interfacial layer (IL); positive bias temperature instability (BTI) (PBTI); reliability; SiON; stress-induced leakage current (SILC); time-dependent dielectric breakdown (TDDB)
资金
- BK21 Program
- System IC 2010 Project
- National Center for Nanomaterials Technology
- World Class University
- Ministry of Education, Science and Technology through the National Research Foundation of Korea [R31-10100]
- Korea Institute of Industrial Technology(KITECH) [B0000055] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [R31-2011-000-10100-0, 과C6A1609] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This letter describes the dielectric degradation and breakdown characteristics of HfSiON/SiON gate dielectric nMOSFETs using the stress-induced leakage current (SILC) analysis. The nMOSFETs show progressive breakdown (PBD) under substrate injection stress, and its characteristic changes as the stress voltage increases, from slow PBD (s-PBD) only, then to a combination of s-PBD and fast PBD (f-PBD), and finally to f-PBD only. It is found that the SILC of nMOSFETs is caused by trap-assisted tunneling mainly through the preexisting deep traps of the high-k layer and the stress-induced traps of the interfacial layer (IL). The stress-induced defects under substrate injection stress are generated within the IL rather than the high-k layer, and the time-dependent dielectric breakdown of the nMOSFETs is driven by the degradation of the IL.
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