Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect

Improved switching uniformity and speed were demonstrated using a filament-type resistive memory. By using a gradual reset operation, a leaky high resistance, which has a smaller gap distance confirmed by C-AFM, was successfully obtained. The leaky high-resistance state shows significantly improved switching uniformity compared to the high-resistance state, which has a higher resistance than the leaky high-resistance state, because of the confinement of the randomly formed conducting filaments. A faster operation speed was achieved using the smaller gap distance. To confirm the improved switching speed, we monitored the real-time oscilloscope response.