期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 12, 页码 1764-1766出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2169931
关键词
Large compressive strain; multilayered diaphragm structure; silicon nanowire (SiNW)
资金
- National University of Singapore [MOE 2009-T2-011 (R263000598112)]
- SERC, Agency for Science, Technology and Research [0921480070, 1021010022, 1021650084, 1021520013]
The characteristics of piezoresistive silicon nanowires (SiNWs) under compressive strain as large as 1.7% are reported. The SiNW is embedded in a multilayered diaphragm structure consisting of silicon nitride and silicon oxide. After leveraging the high fracture stress and intrinsic tensile stress of silicon nitride layer to produce a flat diaphragm, we can create large compressive strain to the SiNW without damaging the diaphragm. The relationship between SiNW resistance change and applied strain is measured and investigated with 2-mu m and 5-mu m SiNWs for both scientific and practical points of view. This approach demonstrates the validity to reveal the SiNW properties under large strain, and the exploration provides good reference for future SiNW-based MEMS sensor design.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据