期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 6, 页码 797-799出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2126017
关键词
GZO; indium free; transparent resistive switching; ZnO
资金
- Singapore Agency for Science, Technology and Research (A*STAR) SERC [092 151 0088]
We report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O3-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.
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