期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 2, 页码 191-193出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2090127
关键词
Complementary resistive switch (CRS); memories; nonvolatile memory; resistive switching
Recently, the sneak-path obstacle in passive crossbar arrays has been overcome by the invention of complementary resistive switches (CRSs) consisting of two bipolar antiserially connected memristive elements. Here, we demonstrate the vertical integration of CRS cells based on Cu/SiO2/Pt bipolar resistive switches. CRS cells were fabricated and electrically characterized, showing high resistance ratios (R-off/R-on > 1500) and fast switching speed (< 120 mu s). The results are one step further toward the realization of high-density passive nanocrossbar-array-based gigabit memory devices.
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