期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 10, 页码 1448-1450出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2161747
关键词
Design for manufacture; logic circuits; organic materials; organic thin-film transistors (TFTs)
资金
- JST/CREST
- NEDO
- Special Coordination Funds for Promoting
- MEXT Japan
- Grants-in-Aid for Scientific Research [23245041, 20676005, 10J07701] Funding Source: KAKEN
Pseudo-CMOS inverters operating at 2 V and comprising four p-type organic transistors with ultrahigh gain are fabricated using self-assembled monolayer gate dielectrics. The inverter gain is as large as 302 at an operation voltage of 2 V, whereas the minimum operation voltage is as small as 0.5 V. The oscillation frequency of a five-stage ring oscillator comprising pseudo-CMOS inverters is 4.27 kHz at 2 V, corresponding to 23.4 mu s of propagation delay per stage. This is the fastest among organic circuits operating at low voltage. Pseudo-CMOS amplifier circuits show a large gain of 240 for a 3.0-mV input voltage.
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