期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 7, 页码 758-760出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2048297
关键词
Organic memory; parylene-C; polymer resistive memory; single component
资金
- National Natural Science Foundation of China [60625403, 90207004]
- Special Funds for Major State Basic Research (973) Projects of China [2006CB302701]
- National Science and Technology Major Project [2009ZX02023-5-2]
A novel flexible polymer resistive memory device based on single-component polymer polychloro-para-xylylene (parylene-C) sandwiched between Al or Cu top electrode and W bottom electrode is presented in this letter. With 4 x 4 crossbar array, the polymer memory device is fabricated by standard photolithograph technology, due to the chemical stability and the immunity of parylene-C to the chemicals and solvents in lithographic process. The device exhibits a good memory margin of more than 10(7) on/off current ratio, as well as ultrafast programming/erasing speed (< 15 ns). Moreover, a good retention time of more than 2.5 x 10(5) s and a cycling endurance of more than 130 program-read-erase-read cycles are obtained in this polymer memory device. The successfully demonstrated performance of this polymer memory shows great potential for transparent, flexible, and high-density memory applications and hybrid integration with CMOS back-end process.
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