相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching
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Lateral scale down, of InGaAs/InAs composite-channel HEMTs with tungsten-based tiered ohmic structure for 2-S/mm gm and 500-GHz fT
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Study of impact of access resistance on high-frequency performance of AlGaN/GaN HEMTs by measurements at low temperatures
Nidhi et al.
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30-nm-gate AlGaN/GaN heterostructure field-effect transistors with a current-gain cutoff frequency of 181 GHz
Masataka Higashiwaki et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2006)
High-power AlGaN/GaN HEMTs for Ka-band applications
T Palacios et al.
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Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs
D Buttari et al.
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