Al2O3-Based RRAM Using Atomic Layer Deposition (ALD) With 1-μA RESET Current

Al2O3-based RRAM devices were fabricated using atomic layer deposition under 100 degrees C and 300 degrees C deposition temperatures, respectively, and their resistance-switching behaviors were investigated. Both devices show unipolar switching if the top electrode (TE) is made of Ti/Al, whereas the bipolar phenomenon is observed when TE is pure aluminum. Devices fabricated at higher temperature give better uniformity and higher resistance ratio. Ultralow RESET current (similar to 1 mu A) was obtained, together with adequate voltage margin.