期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 9, 页码 1044-1046出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2052092
关键词
n-type; organic thin-film transistor (OTFT); PDI-8CN(2); self-assembled monolayer (SAM); solution process
资金
- Ministry of Knowledge and Economy of the Korean Government
- National Research Foundation of Korea [핵06A3701] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We introduce an electron-donating self-assembled monolayer (SAM) to improve the performance of solution-processed n-channel organic thin-film transistor (OTFT) using an organic semiconductor (OS) of an N, N' bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN(2)). The OTFTs without SAM, with electron-withdrawing, and electron-donating layers, exhibited field-effect mobility of 0.02, 0.01, and 0.33 cm(2)/(V . s), respectively. The electron-donating thiophenol layer on source/drain electrodes shows a small injection barrier of 0.05 eV to the n-type OS and thus, exhibited field-effect mobility of 0.33 cm(2)/(V . s) and threshold voltage of -1.1 V.
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