期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 4, 页码 353-355出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2040799
关键词
Nonvolatile memory; reliability estimation; reliability modeling; resistive-switching memory (RRAM)
NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (programming) current and the reliability at high temperature. This letter studies temperature-accelerated data retention in RRAM cells from both experimental and theoretical standpoints, addressing the size/nature of the conductive filament and clarifying the tradeoff between data retention and reset current.
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