期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 1, 页码 56-58出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2035139
关键词
Nonvolatile memories; phase-change memory (PCM); thermal boundary resistance (TBR)
资金
- Intel Corporation
- National Defense Science and Engineering Graduate Fellowship
Thermal interfaces play a key role in determining the programming energy of phase-change memory (PCM) devices. This letter reports the picosecond thermoreflectance measurements of thermal boundary resistance (TBR) at TiN/GST and Al/TiN interfaces, as well as the intrinsic thermal conductivity measurements of fcc GST between 30 degrees C and 325 degrees C. The TiN/GST TBR decreases with temperature from similar to 26 to similar to 18 m(2) . K/GW, and the Al/TiN ranges from similar to 7 to 2.4 m(2) . K/GW. A TBR of 10 m(2) . K/GW is equivalent in thermal resistance to similar to 192 nm of TiN. The fcc GST conductivity increases with temperature between similar to 0.44 and 0.59 W/m/K. A detailed understanding of TBR is essential for optimizing the PCM technology.
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