期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 5, 页码 485-487出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2042677
关键词
Resistance random access memory (ReRAM); resistive memory; retention
资金
- National Research Program of the 0.1-Terabit Nonvolatile Memory Development Project
- Korea Science and Engineering Foundation
- Ministry of Education, Science and Technology of Korea
- Hynix
- Korea Institute of Industrial Technology(KITECH) [10029943] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2008-0060067] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We investigated the state stability of the low-resistance state (LRS) in a resistive switching memory having a Pt/Cu : MoOx/GdOx/Pt structure. Various resistance values of LRS were accurately controlled using an external load resistor connected in series with the resistive memory device. We found that the retention time decreased with an increase in the resistance of LRS. We performed accelerating tests for resistance transition from a low- to a high-resistance state under temperatures ranging from 200 degrees C to 250 degrees C. A predicted resistance of LRS for a ten-year retention period at 85 degrees C was determined based on the Arrhenius law.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
