相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application
Masaharu Kobayashi et al.
JOURNAL OF APPLIED PHYSICS (2009)
Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
Tomonori Nishimura et al.
APPLIED PHYSICS LETTERS (2007)
Fabrication of GeO2 layers using a divalent Ge precursor
M. Perego et al.
APPLIED PHYSICS LETTERS (2007)
Fermi-level pinning and charge neutrality level in germanium
A. Dimoulas et al.
APPLIED PHYSICS LETTERS (2006)
Band offsets of high K gate oxides on high mobility semiconductors
J. Robertson et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2006)
High dielectric constant gate oxides for metal oxide Si transistors
J Robertson
REPORTS ON PROGRESS IN PHYSICS (2006)
Fermi-level depinning for low-barrier Schottky source/drain transistors
D Connelly et al.
APPLIED PHYSICS LETTERS (2006)
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
YC Yeo et al.
JOURNAL OF APPLIED PHYSICS (2002)
Recent advances in Schottky barrier concepts
RT Tung
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)